7th IEEE Global Power, Energy and Communication Conference, GPECOM 2025, Bochum, Almanya, 11 - 13 Haziran 2025, ss.157-166, (Tam Metin Bildiri)
In this study, a comprehensive analytical modeling and simulation-based comparison of two widely used DC-DC converter topologies for high-power applications requiring bidirectional power transfer-the CLLLC resonant converter and the Dual Active Bridge (DAB) converter-is presented. Since isolation, high efficiency, and controllability are crucial in fields such as energy storage systems and electric vehicles, these topologies are frequently preferred. The CLLLC converter is modeled using the Fundamental Harmonic Approximation (FHA), while the DAB is modeled based on the Single-Phase Shift (SPS) control method, and both are simulated in LTSpice under identical design criteria. Both topologies are designed to operate at a switching frequency of 200 kHz, with an input voltage range of 320-420 VDC, a nominal output voltage of 144 VDC, and a rated power of 5 kW. The simulations are conducted under full load (100%) using GaN - and SiC-based MOSFET technologies. The results indicate that the CLLLC topology achieves efficiencies of 96.6%(GaN) and 95.1%(SiC), whereas the DAB topology reaches 98.9%(GaN) and 98.0% (SiC), respectively. The findings demonstrate that SiC devices provide balanced performance in the DAB configuration and that semiconductor selection directly impacts system efficiency depending on the topology. This study not only highlights theoretical efficiency values but also emphasizes the necessity of optimization approaches based on holistic design criteria, including control strategy, thermal management, and EMI considerations.