The effect of hydrostatic pressure on the electrical characterization of Au/n - InP Schottky diodes

UÇAR N., ÖZDEMİR A. F., ALDEMİR D. A., ÇAKMAK S., ÇALIK A., YILDIZ H., ...More

Superlattices and Microstructures, vol.47, no.5, pp.586-591, 2010 (SCI-Expanded, Scopus) identifier

  • Publication Type: Article / Article
  • Volume: 47 Issue: 5
  • Publication Date: 2010
  • Doi Number: 10.1016/j.spmi.2010.02.003
  • Journal Name: Superlattices and Microstructures
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.586-591
  • Keywords: Barrier height, Fermi level pinning, Hydrostatic pressure, Ideality factor, Interface states, Schottky barrier diode
  • Isparta University of Applied Sciences Affiliated: No

Abstract

The effect of hydrostatic pressure on the interface state density and Schottky barrier diode parameters such as ideality factor and barrier height obtained from the current-voltage (I - V) characteristics of Au/n-InP Schottky diodes was studied. It is shown that the ideality factor and the barrier height values of Au/n-InP diodes are in the range 2.36-1.93 and 0.546-0.579 eV for the 0.0-5.0 kbar pressure interval at room temperature, respectively. We have seen that the barrier height for Au/n-InP Schottky diodes has a linear pressure coefficient of 6.87 meV/kbar (= 68.7 meV/GPa), approximately equal to that found for the band gap of InP. This means that the Fermi level is a reference level which is pinned to the conduction band minimum as a function of pressure. On the other hand, the interface state density decreases with increasing hydrostatic pressure due to the rectifying properties of the diode. © 2010 Elsevier Ltd. All rights reserved.