The effect of hydrostatic pressure on the electrical characterization of Au/n - InP Schottky diodes
Superlattices and Microstructures, cilt.47, sa.5, ss.586-591, 2010 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 47 Sayı: 5
- Basım Tarihi: 2010
- Doi Numarası: 10.1016/j.spmi.2010.02.003
- Dergi Adı: Superlattices and Microstructures
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.586-591
- Anahtar Kelimeler: Barrier height, Fermi level pinning, Hydrostatic pressure, Ideality factor, Interface states, Schottky barrier diode
- Isparta Uygulamalı Bilimler Üniversitesi Adresli: Hayır
Özet
The effect of hydrostatic pressure on the interface state density and Schottky barrier diode parameters such as ideality factor and barrier height obtained from the current-voltage (I - V) characteristics of Au/n-InP Schottky diodes was studied. It is shown that the ideality factor and the barrier height values of Au/n-InP diodes are in the range 2.36-1.93 and 0.546-0.579 eV for the 0.0-5.0 kbar pressure interval at room temperature, respectively. We have seen that the barrier height for Au/n-InP Schottky diodes has a linear pressure coefficient of 6.87 meV/kbar (= 68.7 meV/GPa), approximately equal to that found for the band gap of InP. This means that the Fermi level is a reference level which is pinned to the conduction band minimum as a function of pressure. On the other hand, the interface state density decreases with increasing hydrostatic pressure due to the rectifying properties of the diode. © 2010 Elsevier Ltd. All rights reserved.