Hydrostatic pressure effect on the electrical properties of Al/conducting polymer (P3DMTPT)/p-Si/Al structure

UÇAR N., ÖZDEMİR A. F., ÇALIK A., KÖKCE A.

Superlattices and Microstructures, cilt.49, sa.2, ss.124-131, 2011 (SCI-Expanded, Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 49 Sayı: 2
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.spmi.2010.11.005
  • Dergi Adı: Superlattices and Microstructures
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.124-131
  • Anahtar Kelimeler: Barrier height, Fermi level pinning, Hydrostatic pressure, Ideality factor, Interface states, Polymer, Schottky barrier diode
  • Isparta Uygulamalı Bilimler Üniversitesi Adresli: Hayır

Özet

Al/P3DMTPT/p-Si/Al structure has been obtained by the evaporation of the polymer P3DMTPT on the front surface of a p-type silicon substrate. The currentvoltage characteristic (IV) of the structure has been measured under hydrostatic pressure at room temperature. Al/P3DMTPT/p-Si/Al structure demonstrates clearly rectifying behaviour by IV curves under hydrostatic pressure. The barrier height and ideality factor from IV characteristics varies from 3.8 to 2.03 and 0.63 to 0.72 eV at 0.06.0 kbar pressure, respectively. The barrier height for Al/P3DMTPT/p-Si/Al Schottky diodes has a linear pressure coefficient of α=16.3meVkbar(=163meVGPa). The energy distribution of the interface state density determined from IV characteristics ranges from 1.46×1012 cm-2 eV -1 in (0.58-EV)eV to 2.14×1012 cm-2 eV -1 in (0.44-EV)eV and 4.84×1011 cm-2 eV -1 in (0.64-EV)eV to 1.27×1012 cm-2 eV -1 in (0.44-EV)eV for 0 and 6 kbar, respectively. The interface state density decreases with increasing hydrostatic pressure due to the rectifying properties of the diode. © 2010 Elsevier Ltd. All rights reserved.