Effects of measurement temperature and metal thickness on Schottky diode characteristics

ÖZDEMİR A. F., GÖKSU T., Yıldırım N., Turut A.

Physica B: Condensed Matter, cilt.616, 2021 (SCI-Expanded, Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 616
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.physb.2021.413125
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Barrier height, Barrier height inhomogeneity, Barrier metal thickness, Metal semiconductor contacts, Schottky barrier diode, Temperature-dependent
  • Isparta Uygulamalı Bilimler Üniversitesi Adresli: Evet

Özet

Ti Schottky contact (SC) metal with 50 nm and 100 nm thickness on n-GaAs substrate was sputtered by DC magnetron into vacuum unite. It was checked whether the diode parameters changed with SC metal thickness and measurement temperature. As a result of measurements, the potential barrier values decreased while ideality factors remained unchanged with the increasing metal thickness. The results showed that the Ti film thickness has a considerable effect on the barrier potential value. The potential barrier value of the device with thickness of 50 nm was found to be 0.92 and 0.63 eV, and that of 100 nm thickness to be 0.80 and 0.56 eV at 300 and 60 K, respectively. That is, a different of 0.12 eV for the barrier potential was obtained depending on metal thickness at 300 K.