Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

ÖZDEMİR A. F., ÇALIK A., ÇANKAYA G., Sahin O., UÇAR N.

Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences, cilt.63, sa.3-4, ss.199-202, 2008 (SCI-Expanded, Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 63 Sayı: 3-4
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1515/zna-2008-3-414
  • Dergi Adı: Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.199-202
  • Anahtar Kelimeler: Barrier height, Fermi level pinning, Ideality factor, Indentation, Schottky barrier diode
  • Isparta Uygulamalı Bilimler Üniversitesi Adresli: Hayır

Özet

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (Φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of Φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.