Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes
Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences, cilt.63, sa.3-4, ss.199-202, 2008 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 63 Sayı: 3-4
- Basım Tarihi: 2008
- Doi Numarası: 10.1515/zna-2008-3-414
- Dergi Adı: Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.199-202
- Anahtar Kelimeler: Barrier height, Fermi level pinning, Ideality factor, Indentation, Schottky barrier diode
- Isparta Uygulamalı Bilimler Üniversitesi Adresli: Hayır
Özet
Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (Φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of Φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.