Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes
Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences, vol.63, no.3-4, pp.199-202, 2008 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 63 Issue: 3-4
- Publication Date: 2008
- Doi Number: 10.1515/zna-2008-3-414
- Journal Name: Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.199-202
- Keywords: Barrier height, Fermi level pinning, Ideality factor, Indentation, Schottky barrier diode
- Isparta University of Applied Sciences Affiliated: No
Abstract
Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (Φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of Φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.