Research Information System
Journal of Materials Science: Materials in Electronics, vol.34, no.5, 2023 (SCI-Expanded, Scopus)
On the glass substrate, un-doped and different proportions of Yb (1, 2, 3, 4, and 5 wt%) doped CuO thin films were deposited by the ultrasonic spray pyrolysis (USP) method. According to X-ray diffraction (XRD) analysis, the (− 111) plane was the preferred crystallographic orientation for all thin films. It was obtained from atomic force microscopy (AFM) analysis that the surfaces of the produced CuO thin films were not smooth and the roughness increased as the Yb doping ratio increased. Scanning electron microscopy (SEM) analysis reveals that the surfaces of 4 and 5 wt% Yb-doped CuO thin films were porous. The forbidden bandgap values of un-doped and 1, 2, 3, 4, and 5 wt% Yb-doped CuO thin films were calculated by using the Tauc plot. It was observed that 3 wt% Yb-doped CuO thin films with the narrowest bandgap of 1.64 eV. The 3 wt% Yb-doped CuO thin films were deposited on both non-etched and KOH-etched n-type Si by the USP method, and so, p-CuO/n-Si p-n junction diodes were produced. The influence of illumination on several electrical properties of the generated p-n diodes, such as ideality factor (n), zero-bias barrier height (Φbo), and series resistance (Rs), was examined. The p-CuO (un-doped and 3 wt% doped Yb)/n-Si (KOH-etched) diodes exhibited photovoltaic behavior. These diodes show promise for photodiode applications in the optoelectronics industry.